GaInNAsSb for 1.3–1.6- m-Long Wavelength Lasers Grown by Molecular Beam Epitaxy

High-efficiency optical emission past 1.3 m of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55m vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive. While GaInNAs could theoretically be grown lattice-matched to GaAs with a very small bandgap [1], wavelengths are actually limited by the N solubility limit and the high In strain limit. By adding Sb to the GaInNAs quaternary, we have observed a remarkable shift toward longer luminescent wavelengths while maintaining high intensity. The increase in strain of these new alloys necessitates the use of tensile strain compensating GaNAs barriers around quantum-well (QW) structures. With the incorporation of Sb and using In concentrations as high as 40%, high-intensity photoluminescence (PL) was observed as long as 1.6 m. PL at 1.5 m was measured with peak intensity over 50% of the best 1.3 m GaInNAs samples grown. Three QW GaInNAsSb in-plane lasers were fabricated with room-temperature pulsed operation out to 1.49 m.